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MBD4448HTW Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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MBD4448HTW Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 2 page ![]() MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Small Signal Diode Electrical Characteristics I F= VR= VR= VR= VR= Junction Capacitance Notes: 2. Short duration test pulse used tu minimize self-heating effect Tape & Reel specification Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocket hole position Punch hole position Sprocket hole pitch Embossment center Tape width Reel width Type Number - - 0.72 0.855 1.0 1.25 30 25 80 0.62 '- '- '- - '- VF Reverse Breakdown Voltage I R=100μA Units Max - 100.0 - CJ Min Symbol V(BR) - ns 3.5 V 50.0 V nA 4.0 pF μA μA nA Forward Voltage Reverse Recovery Time IF=5mA,VR=6V IR Trr 5.0mA 10mA 100mA 150mA 25V,TJ=150℃ 20V Reverse Leakage Current 70V 75V,TJ=150℃ VR=6V, f=1 MHz W 9.5 ±1 P0 4.00 ±0.1 P1 2.00 ±0.1 F 3.50 ±0.1 1.50 ± 0.1 D 178 ± 2 d D2 13.0 ± 1 E 1.75 ±0.10 Item Symbol C 1.20 ±0.05 W1 12.3 ±1 D1 54.4±1 B 2.55 ±0.05 Dimension(mm) A 2.25 ±0.05 W1 D1 D2 D C d P 1 P0 A B F W E Direction of Feed Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label Version : B12 |
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