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ACTPD1M16 Fiches technique(PDF) 3 Page - Aeroflex Circuit Technology

No de pièce ACTPD1M16
Description  ACT-PD1M16 Fast Page Mode 16 Megabit Plastic Monolithic DRAM
PDF  9 Pages
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Fabricant  AEROFLEX [Aeroflex Circuit Technology]
Site Internet  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

ACTPD1M16 Fiches technique(HTML) 3 Page - Aeroflex Circuit Technology

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Aeroflex Circuit Technology
SCD3750 REV A 8/31/98
Plainview NY (516) 694-6700
3
Standby Current
ICC2
VIH = 2.4V (TTL), After 1 memory cycle,
RAS and CAS high
-
2
mA
ICC3
VIH = Vcc - 0.05V (CMOS), After 1 memory
cycle, RAS and CAS high
-
1
mA
Average Page Current 2
ICC4 RAS low, CAS cycling
-
100
mA
1. Measured with a maximum of one address change while RAS = VIL.
2. Measured with a maximum of one address change while CAS = VIH.
AC Characteristics
*
(VCC = 5.0V ±10%, VSS= 0V, TCI or TCM)
Parameter
Sym
Min Max
Units
Access Time from Column-Address
tAA
-
35
ns
CAS Low Access Time from CAS
tCAC
-
20
ns
Column Access Time from CAS Precharge
tCPA
-
40
ns
Access Time from RAS
tRAC
-
70
ns
OE Access Time
tOEA
-
20
ns
Output Buffer Turn-off Delay1
tOFF
0
15
ns
Output Buffer Turn-off Delay Time from OE1
tOEZ
0
15
ns
* Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance
state to an invalid-data state prior to the specified access times as the outputs are driven when CAS goes low.
1. tOFF and tOEZ are specified when the outputs are no longer driven. The outputs are disabled by bringing either
OE or CAS high.
AC Characteristics
(VCC = 5.0V, VSS = 0V, TCI or TCM)
Parameter
Sym
Min Max
Units
Cycle Time, Read or Write Random 1
tRC
130
-
ns
Cycle Time, Fast Page Mode Read or Write 1,2
tPC
45
-
ns
Cycle Time, Fast Page Mode Read-Modify-Write 1
tPRWC
90
-
ns
Pulse Duration, RAS Low Fast Page Mode 3
tRASP
70
200,000
ns
Pulse Duration, RAS Low Nonpage Mode 3
tRAS
70
10,000
ns
Pulse Duration, CAS Low 4
tCAS
20
10,000
ns
Pulse Duration, CAS High Precharge Time
tCP
10
-
ns
Pulse Duration, RAS High Precharge Time
tRP
50
-
ns
Pulse Duration, WE Low
tWP
15
-
ns
Setup Time, Column Address before CAS Low
tASC
0
-
ns
Setup Time, Row Address before RAS Low
tASR
0
-
ns
Setup Time, Data 5
tDS
0
-
ns
Setup Time, WE High before CAS Low
tRCS
0
-
ns
Setup Time, WE Low before CAS High
tCWL
20
-
ns
Setup Time, WE Low before RAS High
tRWL
20
-
ns
DC Characteristics (continued)
(VCC = 5.0V, VSS = 0V, TCI or TCM)
Parameter
Sym
Conditions
Min
Max
Units



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