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MMDF2C03HD Fiches technique(PDF) 6 Page - Motorola, Inc

No de pièce MMDF2C03HD
Description  COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  MOTOROLA [Motorola, Inc]
Site Internet  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMDF2C03HD Fiches technique(HTML) 6 Page - Motorola, Inc

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MMDF2C03HD
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
Figure 7. Capacitance Variation
Figure 7. Capacitance Variation
10
0
10
15
25
TJ = 25°C
VDS = 0 V VGS = 0 V
1000
800
600
400
200
0
20
Ciss
Coss
Crss
5
5
Ciss
Crss
30
1200
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
400
600
800
1200
1000
10
0
10
15
20
30
VGS
VDS
5
5
Crss
TJ = 25°C
200
25
Ciss
VDS = 0 V VGS = 0 V
Ciss
Coss
Crss
0
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS
VDS
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Qg, TOTAL GATE CHARGE (nC)
0
2
4
6
8
ID = 3 A
TJ = 25°C
VGS
6
3
0
12
9
24
18
12
6
0
VDS
QT
Q1
Q2
Q3
10
12
RG, GATE RESISTANCE (OHMS)
1000
1
100
10
1
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
24
20
16
12
8
4
0
0
10
6
2
0
12
8
4
2
4
6
8
16
ID = 2 A
TJ = 25°C
10
12
14
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
1
VDD = 15 V
ID = 2 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Qg, TOTAL GATE CHARGE (nC)



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