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APT5020 Fiches technique(PDF) 2 Page - Advanced Power Technology

No de pièce APT5020
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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Fabricant  ADPOW [Advanced Power Technology]
Site Internet  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5020 Fiches technique(HTML) 2 Page - Advanced Power Technology

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DYNAMIC CHARACTERISTICS
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
MIN
TYP
MAX
3700
4440
510
715
200
300
150
225
25
37
70
105
12
25
10
20
50
75
815
UNIT
pF
nC
ns
MIN
TYP
MAX
26
104
1.3
5
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.3
Tj = 125°C
4.5
Tj = 25°C
12
Tj = 125°C
18
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 3.85mH, RG = 25Ω, Peak IL = 26A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 IS ≤ -ID [Cont.], di/dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
APT5020SVFR



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