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APT5010B2VR Fiches technique(PDF) 2 Page - Advanced Power Technology

No de pièce APT5010B2VR
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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Fabricant  ADPOW [Advanced Power Technology]
Site Internet  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5010B2VR Fiches technique(HTML) 2 Page - Advanced Power Technology

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1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 2.26mH, RG = 25Ω, Peak IL = 47A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 These dimensions are equal to the TO-247AD without mounting hole
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 0.6
Ω
MIN
TYP
MAX
7400
8900
1000
1400
380
570
312
470
50
75
127
190
14
30
16
32
54
80
510
UNIT
pF
nC
ns
APT5010B2VR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
MIN
TYP
MAX
47
188
1.3
620
14.7
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01



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