STM32F102XB datasheet(45/76 Pages) STMICROELECTRONICS

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STM32F102x8, STM32F102xB

Electrical characteristics

Doc ID 15056 Rev 4

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5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 85 °C unless otherwise specified.

Table 28.

Flash memory endurance and data retention

Table 26.

PLL characteristics

Symbol

Parameter

Value

Unit

Min(1)

Typ

Max(1)

Based on characterization, not tested in production.

fPLL_IN

PLL input clock(2)

Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

18.0

MHz

PLL input clock duty cycle

fPLL_OUT

PLL multiplier output clock

MHz

tLOCK

PLL lock time

200

µs

Jitter

Cycle-to-cycle jitter

300

Table 27.

Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

Guaranteed by design, not tested in production.

Typ

Max(1)

Unit

tprog

16-bit programming time

TA = –40 to +85 °C

52.5

µs

tERASE

Page (1 KB) erase time

TA = –40 to +85 °C

tME

Mass erase time

TA = –40 to +85 °C

IDD

Supply current

Read mode

fHCLK = 48 MHz with 2

wait states, VDD = 3.3 V

Write / Erase modes

fHCLK = 48 MHz, VDD =

3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization not tested in production.

Typ

Max

NEND

Endurance

kcycles

tRET

Data retention

TA = 85 °C, 1000 cycles

Years

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