MJE521

2

Motorola Bipolar Power Transistor Device Data

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

30

0.1

0.3

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

Figure 1. Active–Region Safe Operating Area

5.0 ms

dc

5.0

20

10

5.0

2.0

TJ = 150°C

1.0

2.0

3.0

0.2

40

3.0

1.0 ms

The data of Figure 1 based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided (TJpk)

v 150_C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

IC, COLLECTOR CURRENT (mA)

700

1000

3.0 5.0

20

2000

2.0

100

70

50

10

10

50

100

30

25

°C

TJ = 150°C

– 55

°C

Figure 2. DC Current Gain

Figure 3. “On” Voltage

1.5

IC, COLLECTOR CURRENT (mA)

1.2

0.3

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

500

30

20

0.9

0.6

t, TIME (ms)

0.01

0.01

0.03

1.0

2.0

5.0

10

20

50

100

200

0.1

0.5

0.2

1.0

0.2

0.1

0.05

θJC(t) = r(t) θJC

θJC = 5.0°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

Figure 4. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

300

200

200

500

1000

300

VCE = 1.0 V

VCE(sat) @ IC/IB = 10

3.0 5.0

20

2000

2.0

10

50

100

30

200

500 1000

300

0.02

0.05

0.3

3.0

30

500

1000

300

0.1

0.01