AOB10B60D datasheet(2/9 Pages) AOSMD

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AOB10B60D

Symbol

Min

Typ

Max

Units

BV CES

Collector-Emitter Breakdown Voltage

600

TJ=25°C

1.53

1.8

TJ=125°C

1.75

TJ=150°C

1.81

TJ=25°C

1.52

1.85

TJ=125°C

1.48

TJ=150°C

1.44

V GE(th)

Gate-Emitter Threshold Voltage

5.8

TJ=25°C

TJ=125°C

200

TJ=150°C

2000

I GES

Gate-Emitter leakage current

±100

g FS

4.8

C ies

824

C oes

C res

2.7

Q g

17.4

Q ge

6.2

Q gc

6.3

I C(SC)

R g

3.2

Ω

t D(on)

t r

Collector-Emitter Saturation Voltage

Output Capacitance

Input Capacitance

I CES

Zero Gate Voltage Collector Current

V F

Diode Forward Voltage

DYNAMIC PARAMETERS

µA

VCE=VGE, IC=1mA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Reverse Transfer Capacitance

VGE=0V, VCE=25V, f=1MHz

VCE=20V, IC=10A

VCE=0V, VGE=±20V

Forward Transconductance

V CE(sat)

IC=1mA, VGE=0V, TJ=25°C

VGE=15V, IC=10A

VCE=600V, VGE=0V

VGE=0V, IC=10A

Gate to Collector Charge

Gate to Emitter Charge

VGE=15V, VCE=480V, IC=10A

SWITCHING PARAMETERS, (Load Iductive, TJ=25°C)

Short circuit collector current, Max.

1000 short circuits, Delay between

short circuits ≥ 1.0s

VGE=15V, VCE=400V, RG=30Ω

Total Gate Charge

Gate resistance

VGE=0V, VCE=0V, f=1MHz

Turn-On Rise Time

Turn-On DelayTime

TJ=25°C

t r

t D(off)

t f

8.8

E on

0.26

E off

0.07

E total

0.33

t rr

105

Q rr

0.25

µC

I rm

t D(on)

10.4

t r

15.6

t D(off)

t f

10.4

E on

0.35

E off

0.16

E total

0.51

t rr

194

Q rr

0.55

µC

I rm

6.3

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Energy

Turn-On Rise Time

SWITCHING PARAMETERS, (Load Iductive, TJ=175°C)

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Diode Peak Reverse Recovery Current

TJ=25°C

IF=10A,dI/dt=200A/µs,VCE=400V

Turn-Off Delay Time

TJ=25°C

VGE=15V, VCE=400V, IC=10A,

RG=30Ω,

Parasitic

Ιnductance=100nH

Total Switching Energy

Turn-Off Fall Time

Turn-On Energy

TJ=150°C

IF=10A,dI/dt=200A/µs,VCE=400V

Diode Reverse Recovery Charge

Diode Peak Reverse Recovery Current

Turn-On DelayTime

TJ=150°C

VGE=15V, VCE=400V, IC=10A,

RG=30Ω,

Parasitic Inductance

=100nH

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-On Energy

Diode Reverse Recovery Time

Turn-Off Energy

Total Switching Energy

Rev0: July 2012

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