2N6282 datasheet(2/3 Pages) COMSET

2 / 3 page

2N6282 – 2N6283 – 2N6284

04/12/2012

COMSET SEMICONDUCTORS

2/3

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance Junction-Case

1.09

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage

(*)

IC= 200 m A

IB= 0

2N6282

2N6283

2N6284

100

ICEO

Collector Cutoff

Current

VCE= 30 V, IB= 0

2N6282

VCE= 40 V, IB= 0

2N6283

VCE= 50 V, IB= 0

2N6284

IEBO

Emitter Cutoff

Current

VBE= 5 V, IC= 0

2N6282

2N6283

2N6284

ICEX

Collector Cutoff

Current

VCE= 60 V, VBE= -1.5 V

2N6282

500

µA

VCE= 80 V, VBE= -1.5 V

2N6283

VCE= 100 V, VBE= -1.5 V 2N6284

VCE= 60 V, VBE= -1.5 V

TC = 150°C

2N6282

VCE= 80 V, VBE= -1.5 V

TC = 150°C

2N6283

VCE= 100 V, VBE= -1.5 V

TC = 150°C

2N6284

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 10 A, IB= 40 mA

2N6282

2N6283

2N6284

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 20 A, IB= 200 mA

2N6282

2N6283

2N6284

VBE(SAT)

Base-Emitter

saturation Voltage (*)

IC= 20 A, IB= 200 mA

2N6282

2N6283

2N6284

VBE

Base-Emitter Voltage

(*)

VCE= 3 V, IC= 10 A

2N6282

2,8

2N6283

2N6284

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