SS1881 datasheet(3/9 Pages) SECELECTRONICS

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SS1881

Hall Latch - High Sensitivity

V2.00

May.1, 2012

Detailed General Description

The SS1881 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly.

The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds the operate point

threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that is, a south pole of sufficient strength

towards the branded surface of the device turns the device on. The device remains on if the south pole is removed (B→0). This

latching property defines the device as a magnetic memory.

When the magnetic field is reduced below the release point, BRP , the OUT pin turns off (goes high). The difference in the magnetic

operate and release points is the hysteresis, BHYS , of the device. This built-in hysteresis prevents output oscillation near the switching

point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise.

The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with

equivalent strength and opposite direction drive the output high and low.

Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output state. The correct

state is attained after the fi rst excursion beyond BOP or BRP .

The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence of a sufficiently

strong North pole magnetic field applied to the marked face.

Output level

Unique Features

Based on mixed signal CMOS technology, SS1881 is a Hall-effect device with high magnetic sensitivity. This multi-purpose latch

meets most of the application requirements.

The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and

amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current

consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This

combination results in more stable magnetic characteristics and enables faster and more precise design.

The wide operating voltage from 2.5V to 24V, low current consumption and large choice of operating temperature range according to

“L”, “K”and “E” specification make this device suitable for automotive, industrial and consumer applications.

0mT

Output level

OUT = High

Flux density

OUT = High

B OP

30Gs typ

OUT = Low

UA package

- Latch characteristic

B OP

30Gs typ

B RP

-30Gs typ

B RP

-30Gs typ

Flux density

package

- Latch characteristic

HYS

B HYS

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