STPS3150_11 datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS3150

4/10

Doc ID 9474 Rev 5

Figure 7.

Normalized avalanche power

derating versus pulse duration

Figure 8.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

P(tp)

(1µs)

ARM

t (µs)

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

Figure 9.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

Figure 10.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

SMB

Single pulse

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

DO-201AD

Single pulse

Figure 11.

Relative variation of thermal

impedance junction to lead

versus pulse duration

Figure 12.

Reverse leakage current versus

reverse voltage applied

(typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-l)

SMB flat

t (s)

Single pulse

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

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