STPS40M100C datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

STPS40M100C

4/8

Doc ID 15522 Rev 3

Figure 8.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

IR(mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

203040

5060

708090

100

j=125 °C

j=100 °C

j=75 °C

j=50 °C

j=25 °C

j=150 °C

VR(V)

C(pF)

100

1000

10000

110

100

F=1 MHz

osc=30 mVRMS

j=25 °C

VR(V)

IFM(A)

0.00

0.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

j=25 °C

(Maximum values)

j=125 °C

(Maximum values)

j=125 °C

(Maximum values)

j=125 °C

(Typical values)

j=125 °C

(Typical values)

(V)

Iarm (A)

100

110

120

130

140

150

Operating area

Forbidden area

Varm (V)

STPS40M100C Fiches technique(PDF) 4 Page - STMicroelectronics

STPS40M100C Fiches technique(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL