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STRH40P10 Fiches technique(PDF) 6 Page - STMicroelectronics |
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STRH40P10 Fiches technique(HTML) 6 Page - STMicroelectronics |
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6 / 18 page ![]() Electrical characteristics STRH40P10 6/18 Doc ID 18354 Rev 6 Table 8. Pre-irradiation source drain diode (1) 1. Refer to the Figure 16. Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (2) 2. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 34 136 A A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 30 A, VGS = 0 1.1 V trr (4) Qrr (4) IRRM (4) 4. Not tested in production, guaranteed by process. Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 34 A, di/dt = 40 A/µs VDD= 12 V, TJ = 25 °C 276 345 4.1 316 414 ns µC A trr (4) Qrr (4) IRRM (4) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 34 A, di/dt = 40 A/µs VDD= 12 V, TJ = 150 °C 473 7.1 133 ns µC A |
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