TPD7211F

2011-10-24

1

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD7211F

Power MOSFET Gate Driver for half-bridge

TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD

process is applied on this product.

Features

Power MOSFET gate driver for half-bridge

High-side can operate P channel MOSFET, Low-side can operate

N channel MOSFET

Housed in the PS-8 package and supplied in embossed carrier tape.

Pin Assignment (top view)

Marking

This product has a MOS structure and is sensitive electrostatic discharge.

SON8-P-0303-0.65

Weight: 0.017g (typ.)

Lot No.

7211F

Part No.

(or abbreviation code)

・●

on the lower left of the marking indicates Pin 1

*Weekly code: (Three digits)

Week of manufacture

(01 for first week of year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)

Please contact your TOSHIBA sales representative for details

as to environmental matters such as the RoHS compatibility of

Product.

The RoHS is the Directive 2002/95/EC of the European

Parliament and of the Council of 27 January 2003 on the

restriction of the use of certain

IN1 1

STBY 2

IN2 3

GND 4

8 OUT1

6 N.C

5 OUT2

（

TOP VIEW）