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IS63WV1288DALL/DALS Fiches technique(PDF) 13 Page - Integrated Silicon Solution, Inc

No de pièce IS63WV1288DALL/DALS
Description  128K x 8 HIGH-SPEED CMOS STATIC RAM
PDF  20 Pages
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Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS63WV1288DALL/DALS Fiches technique(HTML) 13 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
13
Rev. B
12/15/2011
IS63WV1288DALL/DALS
IS63WV1288DBLL/DBLS
IS64WV1288DBLL/DBLS
DATA RETENTION WAVEFORM (CEControlled)
HIGH SPEED (IS63/4WV1288DALL/DBLL)
DATA RETENTION SWITCHING CHARACTERISTICS  (2.4V-3.6V)
    Symbol 
Parameter 
Test Condition 
Options 
Min. 
Typ.(1) 
Max. 
Unit
Vdr
VddforDataRetention
SeeDataRetentionWaveform
2.0
—
3.6
V
Idr
DataRetentionCurrent
Vdd=2.0V,CE≥Vdd–0.2V
Com.
—
4
40
µA
Ind.
—
—
55
Auto.
90
tsdr
DataRetentionSetupTime SeeDataRetentionWaveform
0
—
—
ns
trdr
RecoveryTime
SeeDataRetentionWaveform
trc
—
—
ns
Note 1:TypicalvaluesaremeasuredatVdd=3.0V,TA = 25oc andnot100%tested.
VDD
CE
≥ VDD - 0.2V
tSDR
tRDR
VDR
CE
GND
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS  (1.65V-2.2V)
    Symbol 
Parameter 
Test Condition 
Options 
Min. 
Typ.(1) 
Max. 
Unit
Vdr
VddforDataRetention
SeeDataRetentionWaveform
1.2
—
3.6
V
Idr
DataRetentionCurrent
Vdd=1.2V,CE≥Vdd–0.2V
Com.
—
4
40
µA
Ind.
—
—
55
Auto.
—
—
90
tsdr
DataRetentionSetupTime SeeDataRetentionWaveform
0
—
—
ns
trdr
RecoveryTime
SeeDataRetentionWaveform
trc
—
—
ns
Note 1:TypicalvaluesaremeasuredatVdd=1.8V,TA = 25oc andnot100%tested.



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