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STN4480 Fiches technique(PDF) 3 Page - Stanson Technology

No de pièce STN4480
Description  STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
PDF  6 Pages
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Fabricant  STANSON [Stanson Technology]
Site Internet  http://www.stansontech.com
Logo STANSON - Stanson Technology

STN4480 Fiches technique(HTML) 3 Page - Stanson Technology

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STN4480
N Channel Enhancement Mode MOSFET
14.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4480 2010. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250uA
40
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
1.0
3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=32V,VGS=0V
1
uA
VDS=32V,VGS=0V
TJ=55℃
5
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=14A
VGS=4.5V,ID=8A
13
15
15.5
18.0
m
Forward
Transconductance
gfs
VDS=15V,ID=6.2AV
50
S
Diode Forward Voltage
VSD
IS=2.3A,VGS=0V
1.0
V
Dynamic
Total Gate Charge
Qg
VDS=20V,VGS=10V
ID≡14A
22
nC
Gate-Source Charge
Qgs
10.5
Gate-Drain Charge
Qgd
4.8
Input Capacitance
Ciss
VDS =20V,VGS=0V
F=1MHz
1600
pF
Output Capacitance
Coss
320
Reverse
TransferCapacitance
Crss
102
Turn-On Time
td(on)
tr
VDS=20V, VGS=10V
RL= 1.5
ID=5.0A,VGEN=3
3.5
nS
6
Turn-Off Time
td(off)
tf
13.2
3.5



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