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FMBT5401 Fiches technique(PDF) 2 Page - Formosa MS |
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FMBT5401 Fiches technique(HTML) 2 Page - Formosa MS |
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2 / 9 page ![]() Package outline Formosa MS Page 2 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. Features Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" dinicates Halogen-free part, ex.FMBT5401-H. • • Mechanical data • • Case : • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram Epoxy:UL94-V0 rated flame retardant Molded plastic, SOT-23 High Voltage PNP Transistor PARAMETER Collector −Base Voltage Collector −Emitter Voltage Emitter −Base Voltage Collector Current − Continuous Total device dissipation FR-5 board (1) Storage temperature Operating temperature CONDITIONS Symbol V CBO V CEO V EBO I C P D T J T STG -55 ~ +150 -55 ~ +150 -5.0 UNIT Vdc Vdc Vdc mAdc mW oC o Maximum ratings (AT T =25 C unless otherwise noted) A Junction to ambient R θJA OC/W P D Thermal resistance O T = 25 C A O Derate above 25 C O mW/ C Total device dissipation alumina substrate(2) P D mW Junction to ambient R θJA OC/W P D Thermal resistance O T = 25 C A O Derate above 25 C O mW/ C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. -160 -150 -500 556 225 1.8 417 300 2.4 Value Thermal Characteristics Characteristics Symbol CONDITIONS UNIT Max FMBT5401 High Voltage Transistor PNP Silicon SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) DS-231166 2011/01/05 2011/07/21 B 9 |
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