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FMBT4403 Fiches technique(PDF) 2 Page - Formosa MS

No de pièce FMBT4403
Description  600mA Silicon PNP Epitaxial Planar Transistor
PDF  10 Pages
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Fabricant  FORMOSA [Formosa MS]
Site Internet  http://www.formosams.com
Logo FORMOSA - Formosa MS

FMBT4403 Fiches technique(HTML) 2 Page - Formosa MS

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http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
600mA Silicon PNP Epitaxial Planar
Transistor
Features
Capable of 225mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" dinicates Halogen-free part, ex.FMBT4403-H.
• Epitaxial plana chip construction
• Ideal for medium power application and switching
•
•
•
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation FR-5 board
(1)
Storage temperature
Operating temperature
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
MIN.
-55
-65
TYP.
MAX.
-40
-40
-5.0
-600
+150
+150
UNIT
V
V
V
mA
mW
oC
o
Maximum ratings (AT T =25 C unless otherwise noted)
A
Junction to ambient
R
θJA
556
OC/W
Mechanical data
•
• Case :
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Epoxy:UL94-V0 rated flame retardant
Molded plastic, SOT-23
P
D
Thermal resistance
225
1.8
O
T = 25 C
A
O
Derate above 25 C
Formosa MS
O
mW/ C
Total device dissipation alumina
substrate(2)
P
D
mW
Junction to ambient
R
θJA
417
OC/W
P
D
Thermal resistance
300
2.4
O
T = 25 C
A
O
Derate above 25 C
O
mW/ C
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
PNP Epitaxial Planar Transistor
FMBT4403
Document ID
Issued Date
Revised Date
Revision
Page.
SOT-23
Dimensions in inches and (millimeters)
0.035 (0.89)
0.051 (1.30)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
(A)
(B)
(C)
DS-231118
2008/02/10
2010/03/10
B
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