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STPS30M60ST Fiches technique(PDF) 4 Page - STMicroelectronics |
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STPS30M60ST Fiches technique(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STPS30M60S 4/9 Doc ID 022049 Rev 1 Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) Figure 8. Reverse leakage current versus reverse voltage applied (typical values) Figure 9. Junction capacitance versus reverse voltage applied (typical values) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 10 2030 4050 60 I (mA) R V (V) R T = 25 °C j T = 50 °C j T = 75 °C j T = 125 °C j T = 150 °C j T = 100 °C j 100 1000 10000 1 10 100 C(pF) V (V) R F = 1 MHz V = 30 mV T = 25 °C osc RMS j Figure 10. Forward voltage drop versus forward current Figure 11. Thermal resistance junction to ambient versus copper surface under tab 0.1 1.0 10.0 100.0 1000.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I (A) FM (Maximum values) T = 25 °C j (Maximum values) T = 125 °C j (Typical values) T = 125 °C j V (V) FM 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 DPAK 2 R (°C/W) th(j-a) S (cm ) Cu 2 epoxy printed board copper thickness = 35 µm 40.0 50.0 60.0 70.0 80.0 90.0 100.0 110.0 120.0 130.0 140.0 80 85 90 95 100 105 110 115 120 I (A) arm I (V ) 150 °C, 1µs arm arm V (V) arm |
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