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TLE5250 Fiches technique(PDF) 13 Page - Siemens Semiconductor Group |
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TLE5250 Fiches technique(HTML) 13 Page - Siemens Semiconductor Group |
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13 / 22 page ![]() TLE 5250 Semiconductor Group 13 1998-02-01 Characteristics V S = 6 to 25 V; TJ ≤ 150 °C Parameter Symbol Limit Values Unit Test Condition min. typ. max. Supply current I S – – 11 mA Enable = High Output Q1, Q2 Turn-on resistance of output transistors R DS ON 0.3 – 0.5 Ω I = 2.5 A, 150 °C Phase deadtime t D –10 – µs– Diode forward voltage output to + V S VFQ ––1.5 V I FH = 2.5 V Diode forward voltage actual-current pin to output – ––1.5 V I FH = 2.5 V Nominal Current Input current I I8 012 µA– Offset voltage measured for 0 V actual/nominal pin V I(8 – 4) – 4 – 8 mV – Actual Current Turn-off delay of nom/act comparator t d ––0.5 µs– Common-mode error V Comm – 5 – 10 mV – RC/Sync Sync frequency f –20 100 kHz – Trigger threshold lower upper V tL V tH 0.8 1.7 – – 1 2 V V – – Maximum charge voltage V Chm 2.2 2.3 2.4 V R = 39 k Ω C = 820 pF |
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