SFH640 datasheet(1/3 Pages) SIEMENS

No de pièce	SFH640

Description	PHOTOTRANSISTOR 5.3 KV TRIOS HIGH BV CER VOLTAGE OPTOCOUPLER

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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1 / 3 page

5–1

FEATURES

• CTR at IF=10 mA, VCE=10 V

SFH640-1, 40-80%

SFH640-2, 63-125%

SFH640-3*, 100-200%

• Good CTR Linearity with Forward Current

• Low CTR Degradation

• Very High Collector-Emitter Breakdown Volt-

age, BVCER=300 V

• Isolation Test Voltage: 5300 VACRMS

• Low Coupling Capacitance

• High Common Mode Transient Immunity

• Phototransistor Optocoupler

6 Pin DIP Package with Base Connection

• Field Effect Stable: TRIOS+

•

VDE 0884 Available with Option 1

• Underwriters Lab File #E52744

DESCRIPTION

The SFH 640 is an optocoupler with very high

BVCER, a minimum of 300 volts. It is intended for

telecommunications applications or any DC appli-

cation requiring a high blocking voltage. The

SFH640 is a “better than” replacement for H11D1.

*Supplies from this group can't always be guranteed due

to unforseeable yield spread.

+TRIOS–TRansparent IOn Shield

V

DE

SFH 640

PHOTOTRANSISTOR

5.3 KV TRIOS® HIGH BVCER VOLTAGE

OPTOCOUPLER

Maximum Ratings (TA=25°C)

Emitter

Reverse Voltage ...................................................................................6 V

DC Forward Current ....................................................................... 60 mA

Surge Forward Current (tp

≤10 µs) .................................................. 2.5 A

Total Power Dissipation ............................................................... 100 mW

Detector

Collector-Emitter Voltage ................................................................ 300 V

Collector-Base Voltage .....................................................................300 V

Emitter-Base Voltage ..........................................................................7 V

Collector Current ........................................................................... 50 mA

Surge Collector Current (tp

≤1 ms) ............................................... 100 mA

Total Power Dissipation ............................................................... 300 mW

Package

Isolation Test Voltage (between emitter and

detector, refer to climate DIN 40046 part 2

Nov. 74) ...................................................... 5300 VACRMS/7500 VACPK

Isolation Resistance

VIO=500 V, TA=25°C .........................................................................≥10

12

Ω

VIO=500 V, TA=100°C.......................................................................≥10

11

Ω

Insulation Thickness between Emitter and Detector ..................

≥0.4 mm

Creepage

.................................................................................................≥7 mm

Clearance

.................................................................................................≥7 mm

Comparative Tracking Index

per DIN IEC 112/VDE 0303, part1 ................................................... 175

Storage Temperature Range .......................................... -55

°C to +150°C

Operating Temperature Range....................................... -55

°C to +100°C

Junction Temperature...................................................................... 100

°C

Soldering Temperature (max. 10 sec., dip soldering:

distance to seating plane

≥1.5 mm) .............................................260°C

Dimensions in inches (mm)

.010 (.25)

.014 (.35)

.110 (2.79)

.150 (3.81)

.130 (3.30)

.150 (3.81)

.020 (.051) min.

.300 (7.62)

typ.

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

.039

(1.00)

Min.

.018 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

Pin One ID

6

5

4

1

2

3

18

° typ.

.300 (7.62)

.347 (8.82)

4

°

typ.

1

2

3

6

5

4

Base

Collector

Emitter

Anode

Cathode

NC

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