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ADP199ACBZ-R7 Fiches technique(PDF) 11 Page - Analog Devices |
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ADP199ACBZ-R7 Fiches technique(HTML) 11 Page - Analog Devices |
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11 / 16 page ![]() Data Sheet ADP199 Rev. 0 | Page 11 of 16 THEORY OF OPERATION The ADP199 is a high-side NMOS load switch controlled by an internal charge pump. The ADP199 is designed to operate with power supply voltages between 0.9 V and 3.6 V. An internal charge pump biases the NMOS switch to achieve a relatively constant, ultralow on resistance of 40 mΩ across the entire input voltage range. The use of the internal charge pump also allows for controlled turn-on times. The switch is controlled on/off by the enable (EN) input and is capable of interfacing directly with 1.2 V logic signals. The ADP199 is capable of 500 mA of continuous load current as long as TJ is less than 85°C. ESD protection structures are shown in the block diagram (see Figure 29) as Zener diodes. The ADP199 is a low quiescent current device with a nominal 4 MΩ pull-down resistor on its enable pin (EN). The package is a space-saving 0.8 mm × 0.8 mm, 4-ball WLCSP. GND EN VIN VOUT ADP199 CHARGE PUMP AND SLEW RATE CONTROL 4Ω Figure 29. Functional Block Diagram |
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