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TIP32C-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce TIP32C-TN3-R
Description  PNP EXPITAXIAL PLANAR TRANSISTOR
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TIP32C-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

  TIP32C-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP32C-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP32C-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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TIP32C
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R209-017,C
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Emitter-Base Voltage
VEBO
-5
V
DC
IC
-3
A
Collector Current
PULSE
ICM
-5
A
Base Current
IB
-1
A
TO-220
2
W
Power Dissipation
TO-252
PD
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Emitter Sustaining Voltage
(Note)
BVCEO
IC=-30mA,IB=0
-100
V
Collector Cutoff Current
ICES
VCE=-100V, VBE=0
-200
μA
Collector Cutoff Current
ICEO
VCE=-60V, IB=0
-0.3
mA
Emitter Cutoff current
IEBO
VBE=-5V, IC=0
-1
mA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=-3A, IB=-375mA
-1.2
V
Base-Emitter On Voltage*
VBE(ON)
IC=-3A, VCE=-4A
-1.8
V
IC=-1A, VCE=-4V
25
DC Current Gain (Note)
hFE
IC=-3A, VCE=-4V
10
50
Current Gain Bandwidth Product
fT
IC=-0.5A,VCE=-10V, f=1MHz
3
MHz
Note: Pulse Test: PW≤300μs, Duty Cyle≤2%



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