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UTT75P03 Fiches technique(PDF) 2 Page - Unisonic Technologies |
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UTT75P03 Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTT75P03 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-642.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V TC=25°C -75 (Note 2) A Continuous TC=125°C ID -65 A Drain Current Pulsed IDM -240 A Avalanche Current IAR -60 A Repetitive Avalanche Energy (Note 3) L=0.1mH EAR 180 mJ Power Dissipation TC=25°C PD 187 W Junction Temperature TJ -55~175 °C Storage Temperature TSTG -55~175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Package limited. 3. Duty cycle≤1%. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.8 °C/W |
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