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UTT50P04G-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UTT50P04G-TN3-R
Description  -40V, -60A P-CHANNEL POWER MOSFET
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT50P04G-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UTT50P04
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-598.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
TC=25°C
-60 (Note 3)
A
Continuous
(Note 2)
TC=100°C
ID
-43
A
Drain Current
Pulsed
IDM
-100
A
Continuous Source Current (Diode Conduction)
IS
-60 (Note 3)
A
Avalanche Current
IAR
-40
A
Avalanche Energy
EAS
80
mJ
TC=25°C
93.7 (Note 2)
W
Power Dissipation (Note 2)
TA=25°C
PD
3 (Note 1)
W
Junction Temperature
TJ
-55~175
°C
Storage Temperature
TSTG
-55~175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
t≤10 sec.
18
Junction to Ambient (Note 1)
Steady State
θJA
50
Junction to Case
θJC
1.6
°C/W
Notes: 1. Surface Mounted on 1”x1” FR4 Board.
2. See SOA curve for voltage derating.
3. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50A.



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