UTT25P06G-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

UTT25P06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-595.a

ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-60

Continuous

VGS

±15

Gate-Source Voltage

Non−Repetitive (tP≤10ms)

VGSM

±20

Continuous @ TA=25°C

27.5

Drain Current

Pulsed (tP≤10µs)

IDM

Power Dissipation

@TA=25°C

120

Avalanche Energy

(VDD=25V, VGS=10V, IL(PK)=20A, L=3mH, RG=25Ω)

EAS

600

Junction Temperature

+175

°C

Storage Temperature

TSTG

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in

2).

3. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in

2).

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

46.8 (Note 2)

Junction to Ambient

θJA

63.2 (Note 3)

°C/W

Junction to Case

θJC

1.25

°C/W

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