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UTN3055L-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UTN3055L-TN3-R
Description  N-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTN3055L-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UTN3055
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-138.A
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
±25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
12
Pulsed Drain Current (Note 1)
IDM
45
A
Repetitive Avalanche Energy (L=0.05mH, Duty Cycle≦1%)
EAR
3
mJ
Power Dissipation
PD
43
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
60
/W
℃
Junction-to-Case
θJC
2.6
/W
℃
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
25
V
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V
25
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±250
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
0.8
1.2
2.5
V
On-State Drain Current (Note 2)
ID(ON)
VDS=10V, VGS=10V
12
A
VGS=10V, ID=12A
50
90
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=5V, ID=12A
70
120
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
450
pF
Output Capacitance
COSS
200
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=15V, f=1.0MHz
60
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn-ON Delay Time
tD(ON)
6.0
ns
Turn-ON Rise Time
tR
6.0
ns
Turn-OFF Delay Time
tD(OFF)
20
ns
Turn-OFF Fall Time
tF
VDS=15V, VGS=10V,
ID≒12A, RG=2.5Ω, RL=1Ω
5.0
ns
Total Gate Charge
QG
15
nC
Gate-Source Charge
QGS
2.0
nC
Gate-Drain Charge
QGD
VDS=0.5V, VGS=10V, ID=6A
7.0
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IF=IS, VGS=0V
1.5
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
12
A
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
20
A
Peak Reverse Recovery Current
IRM(REC)
15
A
Reverse Recovery Time
tRR
30
nS
Reverse Recovery Charge
QRR
IF = IS, dlF/dt = 100A / µS
0.043
µC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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