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DTC124EL-AE3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce DTC124EL-AE3-R
Description  NPN DIGITAL TRANSISTOR
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC124EL-AE3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

  DTC124EL-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTC124EL-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTC124EL-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTC124E
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-045,D
ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified.)
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input Voltage
VI(OFF)
VCC= 5V, IOUT=100μA
0.5
V
VI(ON)
VOUT= 0.2V, IOUT= 5mA
3
Output Voltage
VO(ON)
IOUT/IIN= 10mA / 0.5 mA
0.1
0.3
V
Input Current
II
VIN= 5V
0.36
mA
Output Current
IO(OFF)
VCC= 50V , VIN=0V
0.5
μA
DC Current Gain
GI
VOUT= 5V, IOUT= 5mA
56
Input Resistance
R1
15.4
22
28.6
kΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE=10V, IE = -5mA, f=100MHz (Note )
250
MHz
Note: Transition frequency of the device
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-10 ~ +40
V
Output Current
IC
100
mA
IO
30
Power Dissipation
SOT-23/SOT-323
PD
200
mW
SOT-523
150
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃



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