UTD484-TN3-R datasheet(1/6 Pages) UTC

No de pièce	UTD484-TN3-R

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 6 page

UNISONIC TECHNOLOGIES CO., LTD

UTD484

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-207.A

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTD484 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON) = 15mΩ @VGS = 10 V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

1.Gate

3.Source

2.Drain

*Pb-free plating product number: UTD484L

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free Plating

Package

1

2

3

Packing

UTD484-TN3-R

UTD484L-TN3-R

TO-252

G

D

S

Tape Reel

UTD484-TN3-T

UTD484L-TN3-T

TO-252

G

D

S

Tube

Numéro de pièce similaire - UTD484-TN3-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UTD484G-K08-3030-R	331Kb / 8P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
	UTD484G-TN3-R	331Kb / 8P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
	UTD484G-TN3-T	331Kb / 8P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
	UTD484L-TN3-R	331Kb / 8P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
	UTD484L-TN3-T	331Kb / 8P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UTD484-TN3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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