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UT9435G-TN3-R Fiches technique(PDF) 4 Page - Unisonic Technologies

No de pièce UT9435G-TN3-R
Description  P-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT9435G-TN3-R Fiches technique(HTML) 4 Page - Unisonic Technologies

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UT9435
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R502-155.C
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Source to Drain Voltage, VSD (V)
0.2
0
0
0.8
0.4
0.6
1.0
0.2
0.6
0.8
0.4
1.0
1.2
Drain-Source On-State Resistance Characteristics
Drain to Source Voltage, VDS (mV)
150
6
0
0
2
4
5
1
100
50
3
200
VGS=-10V,
ID=-4A
VGS=-4.5V,
ID=-2A
0
50
Drain Current vs. Gate Threshold Voltage
Gate Threshold Voltage, VTH (V)
250
100
150
200
300
Drain Current vs.
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage, BVDSS(V)
0
0
50
30
250
10
100
150
200
300
20
50
40
350
400
450
0.5
01.0
2.0
1.5
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.



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