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UT4422G-S08-R Fiches technique(PDF) 1 Page - Unisonic Technologies

No de pièce UT4422G-S08-R
Description  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4422G-S08-R Fiches technique(HTML) 1 Page - Unisonic Technologies

  UT4422G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4422G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4422G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4422G-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4422G-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4422G-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UNISONIC TECHNOLOGIES CO., LTD
UT4422
Power MOSFET
www.unisonic.com.tw
1 of 6
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-206.B
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT4422 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) = 15mΩ @VGS = 10 V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
ORDERING INFORMATION
Ordering Number
Package
Packing
UT4422G-S08-R
SOP-8
Tape Reel


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