UT3009G-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UT3009

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-624.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Breakdown Voltage Temperature Coefficient

△

DSS/T

△ J Reference to 25°C, ID=1mA

96.4

mV/°C

TJ=25°C

Drain-Source Leakage Current

IDSS

VDS=24V,VGS=0V

TJ=55°C

µA

Forward

VGS=+20V, VDS=0V

+100

Gate- Source Leakage Current

Reverse

IGSS

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

1.0

1.5

2.5

VGS(th) Temperature Coefficient

△ GS(TH)

VDS=VGS, ID=250µA

-6.16

mV/°C

VGS=10V, ID=30A

4.7

5.5

mΩ

Static Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=4.5V, ID=15A

7.5

mΩ

Forward Transconductance

gFS

VDS=5V, ID=30A

DYNAMIC PARAMETERS

Input Capacitance

CISS

2361

Output Capacitance

COSS

315

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=15V,

f=1.0MHz

237

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

20.8

Gate to Source Charge

QGS

5.3

Gate to Drain Charge

QGD

VGS=4.5V, VDS=20V,

ID=12A

10.5

Gate Resistance

VGS=0V, VDS=0V, f=1.0MHz

1.7

3.4

Ω

Turn-ON Delay Time

tD(ON)

7.2

13.5

Rise Time

17.3

21.6 32.4

Turn-OFF Delay Time

tD(OFF)

21.3

26.6

Fall-Time

VDD=12V, VGS=10V, ID=5A,

RG=3.3Ω

8.4

10.5 15.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current (Note 1,4)

Maximum Body-Diode Pulsed Current

(Note 2, 4)

ISM

VD=VG=0V, Force Current

155

Drain-Source Diode Forward Voltage

(Note 2)

VSD

IS=1A, VGS=0V, TJ=25°C

Single Pulse Avalanche Energy (Note 3)

EAS

VDD=25V, L=0.1mH,

IAS=24A

Notes: 1. The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

3. The Min. value is 100% EAS tested guarantee.

4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power

dissipation.

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