UT2312L-AE3-R datasheet(1/3 Pages) UTC

No de pièce	UT2312L-AE3-R

Description	20V N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT2312

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-205.D

20V N-CHANNEL

ENHANCEMENT MODE MOSFET

DESCRIPTION

The UT2312 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON) = 33 mΩ @VGS = 4.5 V

* RDS(ON) = 40 mΩ @VGS = 2.5 V

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT2312L-AE3-R

UT2312G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

23N

L: Lead Free

G: Halogen Free

Numéro de pièce similaire - UT2312L-AE3-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UT2312G-AE3-R	174Kb / 3P	N-CHANNEL ENHANCEMENT MODE MOSFET
Unisonic Technologies	UT2312	174Kb / 3P	N-CHANNEL ENHANCEMENT MODE MOSFET

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Cystech Electonics Corp...	MTN2300N3	476Kb / 5P	20V N-CHANNEL Enhancement Mode MOSFET
Diodes Incorporated	ZXM62N02E6	192Kb / 7P	20V N-CHANNEL ENHANCEMENT MODE MOSFET JUNE 2004
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UT2312L-AE3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

UT2312L-AE3-R Fiches technique(HTML) 1 Page - Unisonic Technologies

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