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UT2309G-AE3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UT2309G-AE3-R
Description  P-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2309G-AE3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UT2309
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-148.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
-3.7
A
Pulsed Drain Current (Note 1, 2)
IDM
-12
A
Total Power Dissipation
PD
1.38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 3)
θJA
90
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-0.5
uA
Gate-Source Leakage Current
IGSS
VGS= ±20V, VDS=0V
5
nA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ Reference to 25°C, ID=-1mA
-0.02
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1
-3
V
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS=-10V, ID=-3A
75
mΩ
VGS=-4.5V, ID=-2.6A
120
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-25V,f=1.0MHz
412 660
pF
Output Capacitance
COSS
91
pF
Reverse Transfer Capacitance
CRSS
62
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=-15V,ID=-1A,RG=3.3Ω,
VGS=-10V,RD=15Ω
8
ns
Turn-ON Rise Time
tR
5
ns
Turn-OFF Delay Time
tD(OFF)
20
ns
Turn-OFF Fall Time
tF
7
ns
Total Gate Charge (Note 2)
QG
VDS=-24V, VGS=-4.5V,
ID=-3A
5
8
nC
Gate-Source Charge
QGS
1
nC
Gate-Drain Charge
QGD
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage
VSD
IS=-1A, VGS=0V
-0.76 -1.2
V
Reverse Recovery Time
tRR
IS=-3A, VGS=0V,
dI/dt=-100A/μs
20
ns
Reverse Recovery Charge
QRR
15
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us , duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.



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