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UT50N03G-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UT50N03G-TN3-R
Description  45A, 25V N-CHANNEL POWER MOSFET
PDF  6 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT50N03G-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UT50N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-168.B
ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
45
A
Pulsed Drain Current (Note 3)
IDM
180
A
Single Pulsed Avalanche Energy (Note 4)
EAS
20
mJ
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 19.5mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 3)
θJA
71.4
℃
/W
Junction to Case
θJC
3.0
℃
/W



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