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DTA113TL-AE3-R Fiches technique(PDF) 2 Page - Unisonic Technologies |
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DTA113TL-AE3-R Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() DTA113T PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-091.C ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=-100μA, RBE=∞ -50 V Collector-Emitter Saturation Voltage VCE(SAT) IC=-10mA, IB=-0.5mA -0.3 V Collector Cut-off Current ICBO VCB=-50V, IE=0 -0.1 μA DC Current Gain hFE VCE=-5V, IC=-1mA 100 Input Resistance RIN 0.7 1.0 1.3 kΩ Current Gain Bandwidth Product fT VCE=-6V, IE=10mA 150 MHz |
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