Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

Preview PDF HTML

UP9971L-S08-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce UP9971L-S08-R
Description  5A, 60V N-CHANNEL POWER MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP9971L-S08-R Fiches technique(HTML) 3 Page - Unisonic Technologies

  UP9971L-S08-R Datasheet HTML 1Page - Unisonic Technologies UP9971L-S08-R Datasheet HTML 2Page - Unisonic Technologies UP9971L-S08-R Datasheet HTML 3Page - Unisonic Technologies UP9971L-S08-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 4 page
background image
UP9971
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-294.C
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (VGS=10V)
ID
5
A
SOP-8
30
Pulsed Drain Current (Note 2,3)
DIP-8
IDM
20
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
Pulse width≦300µs, Duty cycle≦2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=60 V, VGS=0V
1
µA
Gate-Body Leakage Current
IGSS
VGS=±25V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25℃, ID=1mA
0.06
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.5
3
V
VGS=10V, ID=5A
60
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=4.5V, ID=2.5 A
72
mΩ
SOP-8
16
Forward Transconductance
(Note)
DIP-8
gFS
VDS=10V, ID=5 A
7
S
DYNAMIC PARAMETERS
SOP-8
1658
Input Capacitance
DIP-8
CISS
1560
pF
Output Capacitance
COSS
156
pF
SOP-8
109
Reverse Transfer Capacitance
DIP-8
CRSS
VDS=25V, VGS=0V,
f =1.0MHz
110
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
9.6
ns
Turn-ON Rise Time
tR
10
ns
Turn-OFF Delay Time
tD(OFF)
30
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=30V, RD=6Ω,
RG=3.3Ω, ID=5 A
5.5
ns
Total Gate Charge (Note)
QG
32.5
nC
Gate Source Charge
QGS
4.9
nC
Gate Drain Charge
QGD
VDS=48V, VGS=10V, ID=5A
8.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note)
VSD
IS =1.6 A,VGS =0 V
1.2
V
Body Diode Reverse Recovery Time
trr
29.2
ns
Body Diode Reverse Recovery Charge
QRR
IS=5A, VGS=0V,
di/dt=100A/µs
48
nC
Note: Pulse width≦300µs, Duty cycle≦2%



Html Pages

1 2 3 4


Fiches technique Télécharger

Go To PDF Page


Lien URL



ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Lien vers la fiche technique    |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com