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UP2003-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UP2003-TN3-R
Description  P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP2003-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UP2003
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-202.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source voltage
VGSS
±20
V
Continuous Drain Current
ID
-9
Pulsed Drain Current (Note 1)
IDM
-50
A
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
50
°C/W
Junction-to-Case
θJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID=-250µA
-25
V
VDS =-24 V, VGS =0 V
-1
Drain Source Leakage Current
IDSS
VDS =-20 V, VGS =0 V
-10
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1.0
-1.5
-3.0
V
On-State Drain Current (Note 2)
ID(ON)
VDS = -5V, VGS = -10V
-50
A
VGS =-4.5 V, ID =-7 A
25
35
Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS =-10 V, ID =-9 A
15
20
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1610
Output Capacitance
COSS
410
Reverse Transfer Capacitance
CRSS
VDS =-15 V, VGS =0V, f=1MHz
200
pF
SWITCHING PARAMETERS
(Note 3)
Gate to Source Charge
QG
17
24
Gate Charge at Threshold
QGS
5
Gate to Drain Charge
QGD
VDS =-0.5V(BR)DSS, VGS =-10 V,
ID =-9 A
6
nC
Turn-ON Delay Time
tD(ON)
6.2
9.3
Turn-ON Rise Time
tR
10
Turn-OFF Delay Time
tD(OFF)
18
Turn-ON Delay Time
tD(ON)
10
Turn-OFF Fall-Time
tF
VDS =-15V, ID≈-1A, VGS =-10V,
RGS =6Ω ,RL=1Ω
5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
-2.1
Diode Pulse Current (Note 1)
ISM
-4
A
Forward Voltage (Note 2)
VSD
IF=IS, VGS=0 V
-1.2
V
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2%
3. Independent of operating temperature.



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