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UK3019G-AE2-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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UK3019G-AE2-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2010 Unisonic Technologies Co., LTD QW-R502-311.b 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3019 is a silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage, low current applications such as small servo motor controller, power MOSFET gate drivers, and other switching applications. FEATURES * Min VDSS =30V * RDS(ON) =5Ω(VGS=4V) * RDS(ON) =7Ω(VGS=2.5V) * Pulsed ID=400mA * Low Voltage Drive (2.5V) SYMBOL SOT-23-3 1 2 3 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UK3019G-AE2-R SOT-23-3 S G D Tape Reel MARKING |
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