UK3018G-AE2-R datasheet(1/3 Pages) UTC

No de pièce	UK3018G-AE2-R

Description	2.5V DRIVE SILICON N-CHANNEL MOSFET

PDF	3 Pages

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Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UK3018

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-313.b

2.5V DRIVE SILICON

N-CHANNEL MOSFET

DESCRIPTION

The UTC UK3018 is a Silicon N-channel MOSFET,

designed to

minimize on-state resistance while it provides

rugged, reliable and

fast switching performance. The product is particularly suited for low

voltage and low current applications such as small servo motor

controllers, power MOSFET gate drivers, and other switching

applications.

FEATURES

* Min VDSS =30V

* RDS(ON) =5Ω(VGS=4V)

* RDS(ON) =7Ω(VGS=2.5V)

* Pulsed ID=400mA

* Low voltage drive (2.5V)

* Halogen Free

SYMBOL

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UK3018G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UK3018G-AL3-R

SOT-323

S

G

D

Tape Reel

MARKING

3018G

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Zetex Semiconductors	ZXMN3B14F	204Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
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Diodes Incorporated	ZXMN3B01F	475Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE DECEMBER 2005
	ZXMN3B04N8	172Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE MAY 2004
	ZXMN3B14F	222Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE JANUARY 2006
Unisonic Technologies	UK3019	133Kb / 3P	2.5V DRIVE SILICON N-CHANNEL MOSFET
Diodes Incorporated	ZXMN3B01F	475Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE DECEMBER 2005
Unisonic Technologies	UK3018BW	138Kb / 3P	DRIVE SILICON N-CHANNEL MOSFET
ZP Semiconductor	ZXMN3B01F	185Kb / 3P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

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UK3018G-AE2-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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