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12P10G-TN3-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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12P10G-TN3-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-262.B 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.29Ω @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 12P10L-TM3-T 12P10G-TM3-T TO-251 G D S Tube 12P10L-TN3-R 12P10G-TN3-R TO-252 G D S Tape Reel 12P10L-TQ2-R 12P10G-TQ2-R TO-263 G D S Tape Reel 12P10L-TQ2-T 12P10G-TQ2-T TO-263 G D S Tube |
Numéro de pièce similaire - 12P10G-TN3-R |
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Description similaire - 12P10G-TN3-R |
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