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DTD113ZL-AL3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce DTD113ZL-AL3-R
Description  NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS)
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTD113ZL-AL3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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DTD113Z
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-082.F
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-5 ~ +10
V
Output Current
IOUT
500
mA
Power Dissipation
SOT-23/SOT-323
PC
200
mW
SOT-523
150
mW
TO-92
625
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input Voltage
VIN(OFF)
VCC =5V, IOUT =100μA
0.3
V
VIN(ON)
VOUT =0.3V, IOUT =20mA
1.5
Output Voltage
VOUT(ON)
IOUT/IIN =50mA/2.5mA
0.1
0.3
V
Input Current
IIN
VIN=5V
7.2
mA
Output Current
IOUT(OFF)
VCC =50V, VIN =0V
0.5
μA
DC Current Gain
hFE
VOUT =5V, IOUT =50mA
82
Input Resistance
R1
0.7
1
1.3
KΩ
Resistor Ratio
R2/R1
8
10
12
Transition Frequency
fT
VCE =10V, IE =−50mA, f=100MHz (Note)
200
MHz
Note: Transition frequency of the device



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