2SC1623

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R206-100.a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

5.0

V

Collector Current (DC)

100

mA

Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

0.1

μA

Emitter Cutoff Current

0.1

μA

DC Current Gain

90

200

600

Collector Saturation Voltage

0.15

0.3

V

Base to Saturation Voltage

0.86

1.0

V

Base Emitter Voltage

0.55

0.62

0.65

V

Gain Bandwidth Product

250

MHz

Output Capacitance

3.0

pF

Note: 1. Pulsed: PW≤350ms, Duty Cycle≤2 %

RANK

L4

L5

L6

L7

RANGE

90 ~ 180

135 ~ 270

200 ~ 400

300 ~ 600

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.