SBP1710-R datasheet(1/6 Pages) WINSEMI

No de pièce	SBP1710-R

Description	High Voltage Fast-Switching NPN Power Transistor

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Fabricant	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Site Internet	http://www.winsemi.com

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SB

SBP1710-R

P1710-R

Rev.A01 Jun.2011

High Voltage Fast-Switching NPN Power Transistor

Features

■ Very high switching speed

■ High Voltage Capability

■ Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

switching

characteristics required such as

lighting

system, switching mode power supply.

Absolute Maximum Ratings

Symbol

Parameter

Test Conditions

Value

Units

VCBO

Collect-Emitter Voltage

VBE=0

900

V

VCEO

Collector-Emitter Voltage

IB=0

500

V

VEBO

Emitter-Base Voltage

IC=0

7

V

IC

Collector Current

7

A

ICP

Collector pulse Current

(Note)

14

A

PC

Total Dissipation at Tc=25℃

45

W

TJ

Operation Junction Temperature

150

℃

TSTG

Storage Temperature

-55~150

℃

T111-3

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More results

SBP1710-R Fiches technique(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

SBP1710-R Fiches technique(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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