Parameter

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

200

V

Drain Current - Continuous

I

D

18

A

Drain Current - Pulsed

I

DM

72

A

Gate-Source Voltage

V

GSS

30

V

Power Dissipation

P

D

125

W

Max. Operating Junction Temperature

T

j

150

Storage Temperature

T

stg

-55~150

IRFS640B

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

A

200

V

Zero Gate Voltage Drain Current

V

10

uA

Gate-Body Leakage Current, Forward

V

100

uA

Gate-Body Leakage Current, Reverse

V

-100

uA

Gate Threshold Voltage

V

A

2.0

4.0

V

Static Drain-Source On-Resistance

0.14

0.18

W

Drain-Source Diode Forward Voltage

V

2.0

V

200V N-Channel MOSFET

Product specification

These N-Channel enhancement mode power field effect transistors are produced using Fairchild

s

proprietary,planar, DMOS technology.

This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored

to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in

the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power

supplies, power factor correction and electronic lamp ballasts based on half bridge.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD