Parameter

Symbol

Typ

Unit

Repetitive peak off-state

voltages

V

DRM

V

RRM

400

V

Average on-state current

I

T(AV)

0.3

A

RMS on-state current

I

T(RMS)

0.47

A

Non-repetitive peak

on-state current

I

TSM

8.0

A

Max. Operating Junction

Temperature

T

j

110

Storage Temperature

T

stg

-45~150

03P4M

GENERAL DESCRIPTION

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Repetitive peak off-state voltages

V

DRM

V

RRM

400

—

—

V

Average on-state current

I

T(AV)

half sine wave; T

—

0.3

—

A

RMS on-state current

I

T(RMS)

all conduction angles

—

0.47

—

A

On-state voltage

V

T

I

—

—

2.5

V

Holding current

I

H

V

—

—

5

mA

Latching current

I

L

V

—

0.6

6

mA

Gate trigger current

I

GT

V

—

15

200

uA

Gate trigger voltage

V

GT

V

—

0.5

0.8

V

Plastic Silicon Controlled Rectifiers

PNPN devices designed for high volume, linepowered consumer

applications such as relay and lamp drivers, small motor controls,

gate drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO-92 package which isreladily

adaptable for use in automatic insertion equipment.

Product specification

TO-92

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD