SD103C datasheet(2/4 Pages) VISHAY

2 / 4 page

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Document Number 85754

Rev. 1.6, 23-Jul-10

SD103A, SD103B, SD103C

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

RthJA

3101)

K/W

Junction temperature

125

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

IR = 50 µA

SD103A

V(BR)

SD103B

V(BR)

SD103C

V(BR)

Leakage current

VR = 30 V

SD103A

5µA

VR = 20 V

SD103B

5µA

VR = 10 V

SD103C

5µA

Forward voltage drop

IF = 20 mA

370

IF = 200 mA

600

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = IR = 50 to 200 mA,

recover to 0.1 IR

trr

Figure 1. Forward Current vs. Forward Voltage

0 100 200 300 400 500 600 700 800 900 1000

F - Forward Voltage (mV)

16765

1000

100

0.1

0.01

0.001

Figure 2. Forward Current vs. Forward Voltage

0.0

0.5

1.0

1.5

2.0

F - Forward Voltage (V)

16766

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