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ICS9DB803DI Fiches technique(PDF) 8 Page - Integrated Device Technology |
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ICS9DB803DI Fiches technique(HTML) 8 Page - Integrated Device Technology |
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8 / 21 page ![]() IDTTM/ICSTM Eight Output Differential Buffer for PCIe Gen 2 ICS9DB803DI REV A 06/18/08 ICS9DB803DI Eight Output Differential Buffer for PCIe for Gen 2 8 Electrical Characteristics - Clock Input Parameters TA = -40 - 85°C; Supply Voltage VDD = 3.3 V +/-5% PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS NOTES Input High Voltage - DIF_IN VIHDIF Differential inputs (single-ended measurement) 600 800 1150 mV 1 Input Low Voltage - DIF_IN VILDIF Differential inputs (single-ended measurement) VSS - 300 0 300 mV 1 Input Common Mode Voltage - DIF_IN VCOM Common Mode Input Voltage 300 1000 mV 1 Input Amplitude - DIF_IN VSWING Peak to Peak value 300 1450 mV 1 Input Slew Rate - DIF_IN dv/dt Measured differentially 0.4 8 V/ns 1,2 Input Leakage Current IIN VIN = VDD , VIN = GND -5 5 uA 1 Input Duty Cycle dtin Measurement from differential wavefrom 45 55 % 1 Input Jitter - Cycle to Cycle JDIFIn Differential Measurement 0 125 ps 1 1 Guaranteed by design and characterization, not 100% tested in production. 2Slew rate measured through Vswing min centered around differential zero |
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