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VB20100C Fiches technique(PDF) 3 Page - Vishay Siliconix |
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VB20100C Fiches technique(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() New Product V20100C, VF20100C, VB20100C & VI20100C Vishay General Semiconductor Document Number: 88977 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T A = 150 °C T A = 125 °C T A = 25 °C Instantaneous Forward Voltage (V) 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) T A = 150 °C T A = 125 °C T A = 25 °C 10 100 1000 10 000 0.1 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Figure 6. Typical Transient Thermal Impedance Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 1 10 0.01 0.1 1 10 100 t - Pulse Duration (s) Junction to Case V(B,I)20100C 1 10 0.01 0.1 1 10 100 t - Pulse Duration (s) Junction to Case VF20100C |
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