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2N6031 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2N6031
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6031 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6031
DESCRIPTION
・With TO-3 package
・Complement to type 2N5631
・High collector sustaining voltage
・High DC current gain
・Low collector saturation voltage
APPLICATIONS
・For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-16
A
ICM
Collector current-peak
-20
A
IB
Base current
-5.0
A
PD
Total Power Dissipation
TC=25℃
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
0.875
℃/W
Fig.1 simplified outline (TO-3) and symbol


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