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2N6031 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6031 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6031 DESCRIPTION ・With TO-3 package ・Complement to type 2N5631 ・High collector sustaining voltage ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -16 A ICM Collector current-peak -20 A IB Base current -5.0 A PD Total Power Dissipation TC=25℃ 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Numéro de pièce similaire - 2N6031 |
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Description similaire - 2N6031 |
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